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Time-Integrated Photoluminescence Studies of In0.3Ga0.7As/GaAs Quantum Dot Molecules

Published online by Cambridge University Press:  01 February 2011

William Kerr ,
Valeria Gabriela Stoleru  and
Anup Pancholi
William Kerr
Affiliation:
bkerr@udel.edu, University of Delaware, Materials Science and Engineering, 201 Dupont Hall, Newark, DE, 19716, United States, 302-831-2804, 302-831-4545
Valeria Gabriela Stoleru
Affiliation:
gstoleru@udel.edu, University of Delaware, Materials Science and Engineering, 201 Dupont Hall, Newark, DE, 19716, United States
Anup Pancholi
Affiliation:
pancholi@udel.edu, University of Delaware, Materials Science and Engineering, 201 Dupont Hall, Newark, DE, 19716, United States
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Abstract

We investigate experimentally and theoretically optical and electronic properties of In0.3Ga0.7As/GaAs quantum dot molecules (QDMs) formed by two layers of self-assembled, vertically stacked quantum dots (QDs). Structures with In0.3Ga0.7As/GaAs QD layers separated by a thin GaAs barrier were grown by solid source molecular beam epitaxy, and were characterized by time-integrated photoluminescence (PL). For the temperature-dependent PL measurements a He-flow optical cryostat was used to control the temperature between 4 and 300 K. The experimentally observed behavior is in good agreement with that expected from our eight-band k·p calculations. Optical and electronic properties of these QDMs are further compared with those of dots grown under conditions that did not promote vertical organization.

Keywords

electronic structureoptical propertiesGa
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 935: Symposium K – Materials Research for THz Applications , 2006 , 0935-K04-06
Copyright
Copyright © Materials Research Society 2006

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