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Time Dependence of Spatial Defect Profiles in a-Si:H Solar Cells with Light-Soaking

Published online by Cambridge University Press:  15 February 2011

D. Caputo
Affiliation:
University of Rome “La Sapienza”, Department of Electronic Engineering, 00184 Rome, Italy
M. Maggi
Affiliation:
University of Rome “La Sapienza”, Department of Electronic Engineering, 00184 Rome, Italy
G. Masini
Affiliation:
University of Rome “La Sapienza”, Department of Electronic Engineering, 00184 Rome, Italy
F. Palma
Affiliation:
University of Rome “La Sapienza”, Department of Electronic Engineering, 00184 Rome, Italy
K. Vasanth
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, New Jersey, 08544, U.S.A.
S. Wagner
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, New Jersey, 08544, U.S.A.
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Abstract

We report on modeling the evolution of the spatial defect profile in the i-layer of a-Si:H solar cells combined with tests of the model against the efficiency decay of amorphous silicon (a-Si:H) p-i-n solar cells under various light-soaking conditions. We use a finite-element device simulator. The defect density during light-soaking is calculated as a function of time and of position. The defect density evolves due to the combined effects of light-induced generation, assumed proportional to the product of free carrier densities, and of light-induced annealing, assumed proportional to the sum of carrier densities. We find that in thick cells defects close to the p-i interface affect cell efficiency less than bulk defects, and that in thin cells the defect density increases significantly in the central portion of the i-layer. However, in thin cells the high electric field masks the effect of the defect density increase.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

[1] Staebler, D.L., Crandall, R.S., Williams, R., Appl. Phys. Lett., 39, 733, (1981);Google Scholar
[2] Tsuda, S., Nakamura, N., Watanabe, K., Takahama, T., Nishiwaki, N., Onishi, M., Kuwano, Y., Solar Cells, 9, 25, (1983);Google Scholar
[3] Li, X.R., Wagner, S., Bennett, M., Hou, J.Y., Rubinelli, F., Fonash, S.J., Proc. 11th E. C Photovoltaic Solar Energy Conference, 703, (1992);Google Scholar
[4] Wagner, S., Vasanth, K., Xu, X., Yang, J., Guha, S. in Proc. 12th E. C Photovoltaic Solar Energy Conference H. S. Stephen & Associates Amsterdam, April 11–14, p. 156159, (1994);Google Scholar
[5] Vasanth, K., Wagner, S., Caputo, D., Bennett, M., to be published in Proc. 1st World Photovoltaics Conference, Hawaii, (1994);Google Scholar
[6] Stutzmann, M., Jackson, W. B., Tsai, C. C., Phys. Rev. B, 32, 23, (1985);Google Scholar
[7] Gleskova, H., Bullock, J. N., Wagner, S., J. Non-Cryst. Solids, 164–166, 183, (1993)Google Scholar
[8] Isomura, M., Hata, N., Wagner, S., Jpn. J. Appl. Phys. 31, 3500, (1992);Google Scholar
[9] Caputo, D., Bullock, J., Gleskova, H., Wagner, S., Mat. Res. Soc. Symp., 336, 165, (1994)Google Scholar
[10] Press, W. H., Flannery, B. P., Teukolsky, S. A., Vetterling, W. T., in Numerical Recipes: the art of scientific computing, (Cambridge University Press, 1987) p. 588;Google Scholar
[11] Dunstan, D.J., J. Phys. C, 30, L419, (1982)Google Scholar