Skip to main content Accessibility help
×
Home

Ti-doped Gallium Phosphide Layers with Concentrations Above the Mott Limit

  • Javier Olea Ariza (a1), David Pastor (a2), María Toledano-Luque (a3), Ignacio Mártil (a4), Germán González-Díaz (a5), Jordi Ibánez (a6), Ramón Cuscó (a7) and Luis Artús (a8)...

Abstract

We have studied the Pulsed-Laser Melting (PLM) effects on Ti implanted GaP to form an Intermediate Band (IB). Structural analysis has been carried out by means of Time of Flight Secondary Ion Mass Spectroscopy (ToF-SIMS), Raman spectroscopy and Glancing Incidence X-Ray Diffraction (GIXRD). After the PLM annealing, Ti concentration is over the Mott limit. Nevertheless, the Raman spectra show a forbidden TO vibrational mode of GaP. This result suggests the formation of crystalline domains with a different orientation in the annealed region regarding to the GaP unannealed substrate. This conclusion has been corroborated by GIXRD measurements. As a result of the polycrystalline lattice, a drop of the mobility is produced.

Copyright

References

Hide All
1 Carey, J. E. Crouch, C. H. Sheehy, M. A. Shen, M. Friend, C. M. and Mazur, E. Opt. Lett. 30, 1773 (2005).
2 Luque, A. Martí, A., Antolín, E., and Tablero, C. Phys. B 382, 320 (2006).
3 Martí, A., Cuadra, L. López, N., and Luque, A. Semiconductors 38, 946 (2004).10.1134/1.1787117
4 Wahnón, P. and Tablero, C. Phys. Rev. B 65, 165115 (2002).
5 Tablero, C. and Wahnón, P., Appl. Phys. Lett. 82, 151 (2003).
6 Olea, J. Toledano-Luque, M., Pastor, D. González-Díaz, G., and Mártil, I., J. Appl. Phys. 104, 016105 (2008).
7 Antolín, E., Martí, A., Olea, J. Pastor, D. González-Díaz, G., Mártil, I., and Luque, A. Appl. Phys. Lett. 94, 042115 (2009).
8 Olea, J. González-Díaz, G., Pastor, D. and Mártil, I., J. Phys. D: Appl. Phys. 42, 085110 (2009).
9 Olea, J. Pastor, D. Toledano-Luque, M., San-Andrés, E., Mártil, I., and González-Díaz, G., Proc.7th IEEE Spanish Conf. Elec. Dev., (Santiago de Compostela, Spain, 2009), pp. 3841.
10 Dement'ev, Y.S., Fedorov, V.A. Bletskan, N.I. Okunev, Y. A. and Severtsev, V.N. Iorganic Materials 16, 794 (1980).
11 Yu, K. M. Walukiewicz, W. Wu, J. Shan, W. Beeman, J. W. Scarpulla, M. A. Dubon, O. D. and Becla, P. Phys. Rev. Lett. 91, 246403 (2003).
12 Yu, K. M. Walukiewicz, W. Ager, J. W. III , Bour, D. Farshchi, R. Dubon, O. D. Li, S. X. Sharp, I. D. and Haller, E. E. Appl. Phys. Lett. 88, 092110 (2006).
13 Pastor, D. Olea, J. Toledano-Luque, M., Mártil, I., González-Díaz, G., Ibáñez, J., Cuscó, R. and Artús, L., J. Appl. Phys. 106, 053510 (2009).
14 Hobden, M. V. and Rusell, J,P. Physics Letters 13, 39 (1964).
15 Vitali, G. Pizzuto, C. Zollo, G. Karpuzov, D. Kalitzova, M. Heide, P. van der, Scarmarcio, G. Spagnolo, V. Chiavarone, L. and Manno, D. Physical Review B 59, 2986 (1999).
16 Carrillo-Cabrera, W., Lundström, T., Acta Chemica Scandinavica A33, 401 (1979)

Keywords

Ti-doped Gallium Phosphide Layers with Concentrations Above the Mott Limit

  • Javier Olea Ariza (a1), David Pastor (a2), María Toledano-Luque (a3), Ignacio Mártil (a4), Germán González-Díaz (a5), Jordi Ibánez (a6), Ramón Cuscó (a7) and Luis Artús (a8)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed