Skip to main content Accessibility help

TiB2as a Diffusion Barrier for Cu/<si> Metallization

  • J. L. Wang (a1) and J. S. Chen (a1)


TiB2, films deposited by co-sputtering from a boron and a TiB, target are evaluated as the diffusion barrier for Cu metallization. Material characteristics of the TiB, films and metallurgical interactions of the Cu/TiB2/<Si> system annealed at 400−700°C for 30 min, in a 80%Ar+20%H2 flow, were investigated by glancing angle X-ray diffraction, Auger electron spectroscopy (AES), and scanning electron microscopy (SEM). Sheet resistance was measured for electrical characterization.

The composition and resistivity of the sputtered TiB1 films varied with the bias applied on the substrate. To obtain a low film resistivity, a negative bias of 200V was applied during sputtering. The resulting TiB2 film is nanocrystalline with a resistivity of 300 μΩcm. After copper deposition, the Cu/TiB2/<Si> samples have a constant sheet resistance after annealing up to 600°C for 30min. The overall sheet resistance of the sample increases by five orders of magnitude after annealing at 700°C, and scanning electron micrographs reveal that the sample surface is severely deteriorated after annealing at 700°C.



Hide All
1. Nicolet, M.-A., Thin Solid Films 52, 415 (1978).
2. Pramanik, D., Jain, V., Solid State Technology January 1993, p. 73.
3. Samsonov, G. V. and Vinitskii, I. M., Handbook of Refractory Compounds, (IFI/Plenum, New York, 1980), p. 225.
4. Shappirio, J. R., Finnegan, J. J.. and Lux, R. A., J. Vac. Sci. Technol. B, 4 (1409).
5. Choi, C. S., Ruggles, G. A., Shah, A. S., Xing, G. C., Osbum, C. M. and Hunn, J. D., J. Electrochem. Soc. 138, 3062 (1991).
6. Sade, G. and Pelleg, J., Applied Surface Science 91, 263 (1995).
7. Basu, S. N., Hubbard, K. M., Hirvonen, J- P., Mitchell, T. E.. and Nastasi, M., in Thin Film Structures and Phase Stability, edited by Clemens, B. M. and Johnson, W. L. (Mat. Res. Soc. Symp. Proc. 187, Pittsburgh, PA, 1990) pp. 157160.
8. Blom, H- O., Larsson, T., Berg, S.. and Östling, M., J. Vac. Sci. Technol. A7, 167 (1989).
9. Cullity, B. D., Elements of X-ray Diffraction, 2nd ed., (Addison-Wesley, Reading, Mass., 1978), p.102.
10. Lohmann, R., Österschulze, E., Thoma, K., Gärtner, H., Herr, W., Matthes, B., Broszeit, E. and Kloos, K.-H., Materials Science and Engineering A139, 259 (1991).
11. Reid, J. S., Kolawa, E., Ruiz, R. P. and Nicolet, M.-A., Thin Solid Films 236, 319 (1993).

TiB2as a Diffusion Barrier for Cu/<si> Metallization

  • J. L. Wang (a1) and J. S. Chen (a1)


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed