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Three-Dimensional Organic Field-Effect Transistors: Charge Accumulation in their Vertical Semiconductor Channels

  • M. Uno (a1), I. Doi (a2), K. Takimiya (a3) and Jun Takeya (a4)


Three-dimensional organic field-effect transistors are developed with multiple vertical channels of organic semiconductors to gain high output current and high on-off ratio. High-mobility and air-stable dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene thin films deposited on horizontally elongated vertical sidewalls have realized unprecedented high output current per area of 2.6 A/cm2 with the application of drain voltage -10 V and gate voltage -20 V. The on-off ratio is as high as 2.7×106. Carrier mobility of the organic semiconductor deposited on the vertical sidewalls is typically 0.30 cm2/Vs. The structure is built also on plastic substrates, where still considerable current modulation is preserved with high output current per area of 70 mA/cm2 and with high on-off ratio of 8.7×106. The performance exceeds practical requirements for applications in driving organic light-emitting diodes in active-matrix displays. The technique of gating with electric double layers of ionic liquid is also introduced to the three-dimensional transistor structure.



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1 Lin, Y. Y. Gundlach, D. J. Nelson, S. F. and Jackson, T. N. IEEE Electron Device Lett. 18, 606 (1997).
2 Klauk, H. Halik, M. Zschieschang, U. Schmid, G. Radlik, W. and Weber, W. J. Appl. Phys. 92, 5259 (2002).
3 Anthony, J. E. Brooks, J. S. Eaton, D. L. and Parkin, S. R. J. Am. Chem. Soc. 123, 9482 (2001).
4 Yamamoto, T. and Takimiya, K. J. Am. Chem. Soc. 129, 2224 (2007).
5 Podzorov, V. Menard, E. Borissov, A. Kiryukhin, V. Rogers, J. A. and Gershenson, M. E. Phys. Rev. Lett. 93, 086602 (2004).
6 Takeya, J. Yamagishi, M. Tominari, Y. Hirahara, R. Nakazawa, Y. Nishikawa, T. Kawase, T. and Shimoda, T. Appl. Phys. Lett. 90, 102120 (2007).
7 Jurchescu, O. D. Popinciuc, M. van Wees, B. J., and Palstra, T. T. M. Adv. Mater. (Weinheim, Ger.) 19, 688 (2007).
8 Uno, M. Tominari, Y. and Takeya, J. Appl. Phys. Lett. 93, 173301 (2008).
9 Uno, M. Doi, I. Takimiya, K. and Takeya, J. Appl. Phys. Lett. 94, 103307 (2009).
10 Ono, S. Seki, S. Hirahara, R. Tominari, Y. and Takeya, J. Appl. Phys. Lett. 92, 103313 (2008).
11 Kudo, K. Wang, D. X. Iizuka, M. Kuniyoshi, S. and Tanaka, K. Thin Solid Films 331, 51 (1998).
12 Parashkov, R. Becker, E. Hartmann, S. Ginev, G. Schneider, D. Krautwald, H. Dobbertin, T. Metzdorf, D. Brunetti, F. Schildknecht, C. Kammoun, A. Brandes, M. Riedl, T. Jo-hannes, H.-H., and Kowalsky, W. Appl. Phys. Lett. 82, 4579 (2003).
13 Naruse, H. Naka, S. and Okada, H. Appl. Phys. Express 1, 011801 (2008).
14Here, the requirement for the on current is given by the assumption that each organic lightemitting diode (OLED) with a certain bright area should be driven by the OFET that occupy at most the same area. Since OLEDs are to be driven in the condition of 3-6 cd/A for sufficient lifetime, the current for achieving usual brightness of 200-1000 cd/m2 is calculated to be typically ̃ 100 A/m2, which equals to 10 mA/cm2 and 1 μA per 100 μm x 100 μm area. See for example, Vaeth, K. M. Information Display 19, 12 (2003).
15 Haddock, J. N. Zhang, X. Zheng, S. Zhang, Q. Marder, S. R. and Kippelen, B. Org. Electron. 7, 45 (2006).


Three-Dimensional Organic Field-Effect Transistors: Charge Accumulation in their Vertical Semiconductor Channels

  • M. Uno (a1), I. Doi (a2), K. Takimiya (a3) and Jun Takeya (a4)


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