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Three Dimensional Integration with Benzocyclobutene as the Wafer-Bonding Medium

  • Sang Kevin Kim (a1), Lei Xue (a1) and Sandip Tiwari (a1)

Abstract

A successful wafer-scale device layering process for fabricating three-dimensional integrated circuits (3D ICs) using Benzocyclobutene (BCB) is described. In the reported embodiment of the method, a sub-micron thick “donor” device layer is transplanted onto a fully fabricated “host” wafer with BCB as the intervening medium. Experimental results, including RIE study and planarization of BCB processed through the 3D fabrication procedure are reported. We conclude with an approach to alleviate BCB and fabrication induced wafer bowing, which leads to poor wafer to wafer alignment in 3D integration.

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