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Threading Dislocations in InxGabxAs/GaAs System

Published online by Cambridge University Press:  26 February 2011

M. Tamura ,
A. Hashimoto  and
Y. Nakatsugawa
M. Tamura
Affiliation:
Optoelectronics Technology Research Laboratory, Tohkodai 5–5, Tsukuba, Ibaraki 300–26, Japan
A. Hashimoto
Affiliation:
Optoelectronics Technology Research Laboratory, Tohkodai 5–5, Tsukuba, Ibaraki 300–26, Japan
Y. Nakatsugawa
Affiliation:
Optoelectronics Technology Research Laboratory, Tohkodai 5–5, Tsukuba, Ibaraki 300–26, Japan
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Abstract

Threading dislocation morphologies and characters, as well as their generation conditions in InxGa1−xAs films grown by molecular-beam epitaxy on GaAs (001) substrates have been examined, mainly using cross-section al transmission electron microscopy (XTEM) as a function of x and film thickness. The formation of severe threading dislocations is detected in epilayers ofx≧0.2 at a fixed film thickness of 3 μm and with film thicknesses greater than 2μmat x=0.2. Most of the observed threading dislocations are 60°- and pure-edge type dislocations along the <211> and [001] directions, respectively. The former type dislocations are mainly observed in layers of x≧0.2; the latter predominantly exist in layers of X≧O.3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 123
Copyright
Copyright © Materials Research Society 1992

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References

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