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Thin Silicon Dioxide using the Rapid Thermal Oxidation Process for Trench Capacitors

Published online by Cambridge University Press:  25 February 2011

Morio Inoue  and
Kenji Yoneda
Morio Inoue
Affiliation:
Kyoto Research Laboratory, Matsushita Electronics Corporation 19, Nishikujo-Kasugacho, Minami-ku, Kyoto 601, Japan
Kenji Yoneda
Affiliation:
Kyoto Research Laboratory, Matsushita Electronics Corporation 19, Nishikujo-Kasugacho, Minami-ku, Kyoto 601, Japan
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Abstract

Electrical characteristics of trench capacitor using RTO oxide, nitroxide and reoxidized nitroxide as the gate insulator are discussed. High temperature RTO is effective to prevent the oxide thinning at the trench corner and dielectric strength of trench capacitor is improved drastically. The lifetime of trench capacitors using RTO is more than 10 times longer than that of trench capacitors using conventional furnaces. Using reoxidized nitroxide as the gate insulator, higher charge to breakdown is obtained. The RTP is superior to the process using the conventional furnace for gate insulator of trench capacitor. Improvement in temperature uniformity and operation reproducibility are essential to RTP equipments for production use.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 283
Copyright
Copyright © Materials Research Society 1989

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References

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