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Thin p-type Microcrystalline Silicon Film on Various Substrates
Published online by Cambridge University Press: 10 February 2011
Abstract
Thin(<20nm) p-type microcrystalline silicon f'dms have been deposited by PECVD in an unusual parameter regime, specifically optimized for extremely thin films. High conductivity (>10.2 Scm−1) and low activation energy(<0.08eV) of thin films have been achieved on various metal oxide substrates i.e., Coming 7059 glass, SnO2:F, TiO2 and Ta2O5. Crystallinity was confirmed by Raman spectroscopy and UV reflectance. Deposition of p-μc-Si:H is possible on void rich films (a-SiC:H and low temperature deposited a-Si:H) but not on device quality a-Si:H. Cells made in a superstrate structure using p-μc-Si:H as the window layer directly on top of SnO2:F coated glass yielded 9.63% efficiency, with an improvement in the blue spectral response compared to the cell made with a- SiC:H(B) as window layer. Tandem cells (a-Si:H/a-Si:H) incorporating p-μc-Si:H along with n-μc- Si:H in the tunnel junction yielded 8.8% efficiency.
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- Copyright © Materials Research Society 1996
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