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Thin Microcrystalline Silicon by a Microwave Remote Plasma Deposition Scheme for Heterojunction Solar Cells and Thin Film Transistors

Published online by Cambridge University Press:  15 February 2011

B. Jagannathan ,
R. L. Wallace  and
W. A. Anderson
B. Jagannathan
Affiliation:
Center for Electronic and Electro-optic Materials, Dept. of Electrical and Computer Eng, State University of New York at Buffalo, Amherst, NY 14260, USA
R. L. Wallace
Affiliation:
Center for Electronic and Electro-optic Materials, Dept. of Electrical and Computer Eng, State University of New York at Buffalo, Amherst, NY 14260, USA
W. A. Anderson
Affiliation:
Center for Electronic and Electro-optic Materials, Dept. of Electrical and Computer Eng, State University of New York at Buffalo, Amherst, NY 14260, USA
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Abstract

A microwave remote plasma system, operating in an electron cyclotron resonance (ECR) condition, has been designed to deposit microcrystalline silicon (μ c-Si). The plasma properties have been studied by Langmuir probe measurements in the deposition region. Microcrystalline silicon films of thickness < 0.3 μm have been grown by the decomposition of 2% SiH4/Ar diluted in H2. The films were analyzed for dark and photoconductivity, crystallinity and total H2 content. Raman spectroscopy indicates >50% crystallinity for films deposited between 300–400 °C at pressures of 10 mTorr with an input power in the range of 200–600 W for a H2/SiH4 ratio of 60. An increase in deposition temperature from 300 to 400 °C resulted in an increase in conductivity along with a decrease in the activation energy. H2 evolution studies indicate that the purely μ c-Si films show a total 2.5% H2 content compared with the 16.5% seen for the totally amorphous films. Better structural and electrical properties have more recently been obtained using 2% SiH4/He mixtures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 901
Copyright
Copyright © Materials Research Society 1997

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Footnotes

*

Present Address: Evergreen Solar, Inc., 211 Second Ave., Waltham, MA 02154

References

1.Fisher, D., Dubail, S., Anna Selvan, J. A., Pellaton Vaucher, N., Pltz, R., Hof, Ch., Kroll, U., Meier, J., Torrese, P., Keppner, H., Wyrsch, N., Goetz, M., Shah, A., Ufert, K. D., Proc. 25th IEEE PVSC, p 1053(1996)Google Scholar
2.Woo, J. I., Lim, H. J., and Jang, J., Appl. Phys. Lett., 65, p 1644 (1994)Google Scholar
3.Jang, J., Kim, S. C., Park, K. C., and Kim, Sung Ki, J. Appl. Phys., 75, p 3184 (1994)Google Scholar
4.Tsai, C. C., Thompson, R., Donald, C., Ponce, F. A., Anderson, G.B., and Wacker, B., Mat. Res. Soc. Proc, Vol. 118, p 49 (1988)Google Scholar
5.Wang, K. C., Hwang, H. L., Leong, P. T., and Yew, T. R., J. Appl. Phys., 77, p 6543 (1995)Google Scholar
6.Torres, P., Meier, J., Fluckiger, R., Kroll, U., Anna Selvan, J. A.,, Keppner, H., and Shah, A., Appl. Phys. Lett., 69, p 1373 (1996)Google Scholar
7.Dalal, V., Kaushal, S., Girvan, R., Hariasra, S., and Sipahi, L., Proc. 25th IEEE PVSC, p 1069 (1996)Google Scholar
8.Hershkowitz, N., Plasma Dignostics, Vol 1 (Discharge Parameters and Chemistry), edited by Auciello, O., and Flamm, D. L., Academic Press, p 113 (1989)Google Scholar
9.Beyer, W., and Wagner, H., J. Appl. Phys., 53, p 8745 (1982)Google Scholar