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Thin Films Stress Aging Study using Micromachined Cantilevers

Published online by Cambridge University Press:  01 February 2011

Christophe Malhaire ,
Alexandru Andrei ,
Sebastiano Brida  and
Daniel Barbier
Christophe Malhaire
Affiliation:
LPM (UMR CNRS 5511) INSA de Lyon, Villeurbanne, France
Alexandru Andrei
Affiliation:
LPM (UMR CNRS 5511) INSA de Lyon, Villeurbanne, France
Sebastiano Brida
Affiliation:
Auxitrol S.A., Esterline Sensors Group, Bourges, France
Daniel Barbier
Affiliation:
LPM (UMR CNRS 5511) INSA de Lyon, Villeurbanne, France
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Abstract

The purpose of the present work was to study the long term stress stability of thin films used in harsh environment sensors. A stress determination method, based on cantilevers curvatures measurements, checked by means of 3D finite element simulations, has been proposed. Stress measurements for dielectric (silicon oxide and nitride) and metallic (AlTi and TiW) thin films have been periodically performed at room temperature, after standard annealing (450°C / 30 min in a N2+H2 atmosphere) and after 4 weeks thermal aging at 150°C or 200°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 854: Symposium U – Stability of Thin Films and Nanostructures , 2004 , U8.12
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Townsend, P.H., Barnett, D.M. and Brunner, T.A., J. Appl. Phys. 62–11, 4438–4444 (1987).Google Scholar
2. Klein, C.A., J. Appl. Phys. 88–9, 5487–5489 (2000).Google Scholar
3. Malhaire, C., Guyot, Y., LeBerre, M., Champagnon, B., Sibaï, A. and Barbier, D., MRS proc. 444, 179–184 (1997).Google Scholar
4. Wortman, J.J. and Evans, R.A., Journal of Applied Physics 36–1, 153–156 (1964).Google Scholar
5. Comte, C. and von Stebut, J., Surface and Coatings Technology 154, 42–48 (2002).Google Scholar
6. Stoffel, , Kovacs, A., Kronast, W. and Müller, B., J. Micromech. Microeng. 6, 1–13 (1996).Google Scholar
7. Kalkman, J., Verbruggen, A. H., and Janssen, G. C. A. M., Applied Physics Letters 78–18, 2673–2675 (2001).Google Scholar
8. Renault, P.O., Badawi, K.F., Bimbault, L., Goudeau, Ph., Elkaïm, E. and Lauriat, J.P., Applied Physics Letters 73–14, 1952–1954 (1998).Google Scholar
9. Ti-Kuang Hou, M. and Chen, R., J. Micromech. Microeng. 13, 141–148 (2003).Google Scholar
10. Jaccodine, R.J. and Schlegel, W.A., J. Appl. Phys. 37–6, 2429–2434 (1966).Google Scholar
11. Lemiti, M., Malhaire, C. and Semmache, B., Micro System Technologies 2003 Proceedings, München, Germany, 504–506 (2003).Google Scholar
12. O'Donnell, K., Kostetsky, J. and Post, R.S., Flip Chip Technology Workshop Proceedings, Austin, Texas, June 24–26 (2002).Google Scholar