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Thin Films of p-Type CdTe Grown with Ion-Beam-Assisted Doping

  • Paul Sharps (a1), Alan L. Fahrenbruch (a1), Adolfo Lopez-Otero (a1) and Richard H. Bube (a1)

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The purpose of the present work is to investigate p-CdTe thin films grown by ionassisted doping (IAD). Controlled doping in homo-epitaxial films resulting in carder densities up to 2×1017 cm-3 was obtained using P ions as the dopant. About 1.5% of the impinging P ions became electrically active in the films. Solar cells of n-CdS/p-CdTe were prepared and used as a diagnostic tool in understanding the p-CdTe films.

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