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Thin Film Transistors with Electron Mobility of 40 cm2V−1s−1 Made from Directly Deposited Intrinsic Microcrystalline Silicon

  • I-Chun Cheng (a1), Sigurd Wagner (a1) and Marcelo Mulato (a2)

Abstract

We report top-gate n channel μc-Si:H TFTs with saturated electron mobilities up to 40 cm2V−1s−1 and ON/OFF ratios up to ~106. The μc-Si:H was grown from silane, dichlorosilane, and hydrogen. The glow discharge was excited at a frequency of 80 MHz to raise the growth rate to ∼1Å/sec, which is above that achievable with 13.56 MHz. Deposition temperatures were 230°C for the i-layer and 280°C (the highest temperature in the process) for the n+ source and drain layers. The TFTs were fabricated from 340-nm thick μc-Si:H films, and with a 300-nm thick gate insulator of plasma deposited SiO2.

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Thin Film Transistors with Electron Mobility of 40 cm2V−1s−1 Made from Directly Deposited Intrinsic Microcrystalline Silicon

  • I-Chun Cheng (a1), Sigurd Wagner (a1) and Marcelo Mulato (a2)

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