Hostname: page-component-7bb8b95d7b-fmk2r Total loading time: 0 Render date: 2024-09-18T14:10:23.076Z Has data issue: false hasContentIssue false
  • English
  • Français

Thin Film Reactions on Alloy Semiconductor Substrates

Published online by Cambridge University Press:  25 February 2011

D. A. Olson ,
K. M. Yu ,
J. Washburn  and
T. Sands
D. A. Olson
Affiliation:
Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720
K. M. Yu
Affiliation:
Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720
J. Washburn
Affiliation:
Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720
T. Sands
Affiliation:
Bellcore, 331 Newman Springs Rd., Red Bank, New Jersey 07701.
Get access

Abstract

The interactions between Pt thin films and In53Ga47As have been studied. An important result is that the reaction kinetics deviate from those of other metal/compound semiconductor reactions. The kinetics can be divided into two stages, where the reaction slows by a factor of 5 after ~60 minutes of annealing at 400°C. In addition, Auger depth-profiling indicates that an In-rich layer develops at the reacted layer/substrate interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 713
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Williams, R. H., Varma, R. R., and Montgomery, V., Journal of Vacuum Science and Technology, 16(5), 1979, 1418.Google Scholar
[2] Spicer, W. E., Lindau, I., Skeath, P., Su, C. Y., and Chye, P., Physical Review Letters 44(6), 1980, 420.Google Scholar
[3] Freeouf, J. L. and Woodall, J. M., Applied Physics Letters 39, 1981, 727.Google Scholar
[4] Brillson, L. J., Brucker, C. F., Katnani, A. D., Stoffel, N. G., Daniels, R., and Mar-garitondo, G., Journal of Vacuum Science and Technology, 21(2), 1982, 564.Google Scholar
[5] Lile, D. L., Journal of Vacuum Science and Technology, B 2(3), 1984, 496.Google Scholar
[6] Robinson, G. Y., Physics and Chemistry of III-V Compound Semiconductor Interfaces (Wilmsen, C. W., ed.) p. 73, Plenum Press, New York (1985).Google Scholar
[7] Kumar, V., Journal of the Physics and Chemistry of Solids, 36, 1975, 535.Google Scholar
[8] Sinha, A. K. and Poate, J. M., Thin Films- Interdiffusion and Reactions (Poate, J. M., Tu, K. N., and Mayer, J. W., eds.) p. 416, John Wiley and Sons, New York, (1978).Google Scholar
[9] Fontaine, C., Okumura, T. and Tu, K. N., Journal of Applied Physics, 54, 1983, 1404.Google Scholar
[10] Olson, D. A., Yu, K. M., Washburn, J., and Sands, T., Chemistry and Defects in Semiconductor Heterostructures, Materials Research Society Symposia Proceedings, Volume 148, Kawabe, M., Sands, T., Weber, E., and Williams, R., eds., p. 47, (Materials Research Society, Pittsburgh, 1989).Google Scholar
[11] Kajiyama, K., Mizushima, Y., and Sakata, S., Applied Physics Letters, 23, 458, (1973).Google Scholar