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Thin Film Metal Oxide Semiconductors Deposited on Polymeric Substrates

  • Elvira Fortunato (a1), Patrícia Nunes (a1), António Marques (a1), Daniel Costa (a1), Hugo Águas (a1), Isabel Ferreira (a1), Maria E. V. Costa (a2) and Rodrigo Martins (a1)...

Abstract

Highly textured transparent conducting ZnO:Al thin films have been prepared by r.f. magnetron sputtering. The films were deposited on polyester (Mylar type D, 100 µm thickness) and glass substrates at room temperature. Surface stylus profiling, X-ray diffraction, scanning electron microscopy, transmission electron microscope and Hall effect measurements as a function of temperature have been used to characterize the produced films. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface (columnar structure). The ZnO:Al thin films with a resistivity as low as 3.6×10−2 µcm have been obtained, as deposited.

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