Skip to main content Accessibility help
×
Home

Thin Film Diamond Field Effect Transistors For High Power Applications

  • Hui Jin Looi (a1), Lisa Ys Pang (a1) and Richard B. Jackman (a1)

Abstract

Early predictions that diamond would be a suitable material for high performance, high power devices were not supported by the characteristics of diodes and field effect transistors (FETs) fabricated on boron doped (p-type) thin film material. In this paper commercially accessible polycrystalline thin film diamond has been turned p-type by the incorporation of near surface hydrogen. Schottky diodes and metal-semiconductor FETs (MESFETs) have been fabricated using this approach which display unprecedented performance levels; diodes with a rectification ratio > 106, leakage currents < l nA, no indication of reverse bias breakdown at 100V and an ideality factor of 1.1 have been made. Simple MESFET structures that are capable of withstanding VDS values of 100V with low leakage and current saturation (pinch-off) characteristics have also been fabricated. Predictions based upon experiments performed on these devices suggest that optimised device structures will be capable of operation at power levels up to 20 W/mm, implying that thin film diamond may after all be an interesting material for power applications.

Copyright

References

Hide All
1. Geis, M. W., Rothman, D. D., Ehrlich, D. J., Murphy, R. A. and Lindley, W. T., IEEE Electron Dev. Lett. 8, 341 (1987)
2. Gildenblat, G. Sh., Grot, S. A. and Badzian, A., Proc. of IEEE vol.79, 647 (1991)
3. Sonoda, S., Won, J. H., Yagi, H., Hatta, A., Ito, T. and Hiraki, A., Appl. Phys. Lett. 70, 2574 (1997)
4. Werner, M., Dorsch, O., Baerwind, H. U., Obermeier, E., Haase, L., Seifert, W., Ringhandt, A., Johnston, C., Romani, S., Bishop, H. and Chalker, P. R., Appl. Phys. Lett. 64, 595 (1994)
5. Nishimura, K., Kumagai, K., Nakamura, R. and Kobashi, K., J. Appl. Phys. 76, 8142 (1994)
6. Pang, L. Y. S., Chan, S. S. M. and Jackman, R. B., Appl. Phys. Lett. 70, 339 (1997)
7. Kawarada, H., Aoki, M. and Ito, M., Appl. Phys. Lett. 65, 1563 (1994)10.1063/1.112915
8. Hokazono, A., Ishikura, T., Nakamura, K., Yamashita, S. and Kawarada, H., Diamond & Relat. Mater. 5, 706 (1996)
9. Shirafuji, J. and Sugino, T., Diamond & Relat. Mater. 5, 706 (1995)
10. Kawarada, H., Sasaki, H. and Sato, A., Physics Rev. B 52, 11351 (1995)10.1103/PhysRevB.52.11351
11. Hayashi, K., Yamanaka, S., Okushi, H. and Kajimura, K., Appl. Phys. Lett. 68, 376 (1996)
12. Looi, H. J., Pang, L. Y. S., Molloy, A. B., Jones, F., Foord, J. S. and Jackman, R. B., Diamond & Relat. Mater. (in press DIAMAT 1055)
13. Looi, H. J., Foord, J. S. and Jackman, R. B., Appl. Phys. Lett. (in press)
14. Malta, D. M., Windheim, J. A. and Fox, B. A., Appl. Phys. Lett. 62, 2926 (1993)
15. Mori, Y., Kawarada, H. and Hiraki, A., Appl. Phys. Lett. 58, 940 (1990)
16. Shiomi, H., Nakahata, H., Imai, T., Nishibayashi, Y. and Fujimori, N., Jpn J. Appl. Phys. 28, 758 (1989)
17. Gildenblat, G. Sh., Grot, S. A., Hatfield, C. W., Badzian, A. R. and Badzian, T., IEEE Electron Dev. Lett. 11, 371 (1993)10.1109/55.62959
18. Looi, H. J., Foord, J. S. and Jackman, R. B., J. Appl. Phys. (in press)
19. Sriram, S., Siergiej, R. R., Clarke, R. C., Agarwal, A. K., Brandt, C. D., Physica Status Solidi (A) Applied Research vol.162, 441 (1997)10.1002/1521-396X(199707)162:1<441::AID-PSSA441>3.0.CO;2-3
20. Werner, M., Dorsch, O., Baerwind, H. U., Obermeier, E., Johnston, C., Chalker, P. R. and Romani, S., IEEE Transactions on Electron Devices 42, 1344 (1995)

Thin Film Diamond Field Effect Transistors For High Power Applications

  • Hui Jin Looi (a1), Lisa Ys Pang (a1) and Richard B. Jackman (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed