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Thickness-Dependent Electrical Properties in Lanthanum-Doped Pzt Thick Films

Published online by Cambridge University Press:  10 February 2011

H.D. Chen ,
K.K. Li ,
C.J. Gaskey  and
L.E. Cross
H.D. Chen
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
K.K. Li
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
C.J. Gaskey
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
L.E. Cross
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
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Abstract

Lanthanum-doped lead zirconate titanate (PLZT) films, with thickness up to 10 μm, are fabricated on platinized silicon substrates through a modified sol-gel technique. Thicknessdependent piezoelectric properties measured with a double-beam laser interferometer show piezoelectric relaxation in field-induced strain as the ac driving field exceeds 10 kV/cm. In addition, the strain levels of PLZT thick films are approximately one third of those of undoped PZT films under the same fabrication and measurement conditions. For 1 μm PZT(55/45) films doped with 0, 2, and 4 mole% La, the P-E hysteresis exhibits decreasing squareness with increasing lanthanum content while the piezoelectric d33 coefficient reduces from 130 to 52 pC/N. Residual (tensile) stress in these films and resulted depoling effect may be responsible for this phenomenon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 325
Copyright
Copyright © Materials Research Society 1996

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