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Thickness Dependent Phase Formation in Fe Thin Film and Si Substrate Solid Phase Reaction

Published online by Cambridge University Press:  15 February 2011

G Y. Molnár
Affiliation:
KFKI Research Institute for Materials Science, H-1525 Budapest, P.O.Box 49, Hungary, peto@rl.atki.kflki.hu
G. Pető
Affiliation:
KFKI Research Institute for Materials Science, H-1525 Budapest, P.O.Box 49, Hungary, peto@rl.atki.kflki.hu
E. Zsoldos
Affiliation:
KFKI Research Institute for Materials Science, H-1525 Budapest, P.O.Box 49, Hungary, peto@rl.atki.kflki.hu
Z. E. Horváth
Affiliation:
KFKI Research Institute for Materials Science, H-1525 Budapest, P.O.Box 49, Hungary, peto@rl.atki.kflki.hu
N. Q. Khánh
Affiliation:
KFKI Research Institute for Materials Science, H-1525 Budapest, P.O.Box 49, Hungary, peto@rl.atki.kflki.hu
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Abstract

The solid phase reaction of Fe thin films with (111) Si substrate was investigated at constant annealing temperature and time (700°C, 7 minutes) as a function of the initial iron film thickness (from 5 nm to 27.5 um in 2.5 nm steps). The formed phases were analysed by X-ray diffraction, Rutherford backscattering and transmission electron microscopy and optical microscopy.

After annealing FeSi phase was detected in the thinner samples. Samples with Fe layers thicker than 12.5 nm contained a β-FeSi2 phase. This special phase sequence was explained with the help of a nucleation controlled phase formation model, taking into consideration the critical radius of nuclei of the new phase. The advantages of using the film thickness as a variable during investigation of solid phase thin film reactions and the probable substrate effects are also discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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