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Thickness Dependence of Leakage Current Behavior in Epitaxial (Ba,Sr)TiO3 Thin Films

  • Kun Ho Ahn (a1), Sang Sub Kim (a2) and Sunggi Baik (a1)

Abstract

Thickness dependence of leakage current behaviors was investigated in epitaxial (Ba0.5Sr0.5)TiO3 thin films with different thicknesses of 55 - 225 nm prepared on Pt(001)/MgO(001) substrates by a radio-frequency magnetron sputtering technique. Below a certain critical film thickness (≤ 55 nm), the Schottky emission is a ruling leakage conduction mechanism over a wide electric field range. In contrast, in thicker films (> 55 nm), the Schottky emission still operates at low electric fields, however at high electric fields the Fowler-Nordheim (F-N) tunneling dominates. The transition film thickness appears to be associated with overlapping of the depletion layers formed at the top and bottom electrode interfaces.

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Thickness Dependence of Leakage Current Behavior in Epitaxial (Ba,Sr)TiO3 Thin Films

  • Kun Ho Ahn (a1), Sang Sub Kim (a2) and Sunggi Baik (a1)

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