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Thermomechanical Properties of Hydrogen Silsesquioxanes

  • W.-Y. Shih (a1), J.-H. Zhao (a2), A. J. McKerrow (a1), E. T. Ryan (a2), K. J. Taylor (a1) and P. S. Ho (a2)...

Abstract

Using Si and GaAs substrates, the coefficient of thermal expansion (CTE) and the bi-axial modulus of thin hydrogen silsesquioxanes (HSQ) films are deduced by means of wafer curvature measurement. The same properties of plasma-enhanced CVD oxide are also reported.

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[1] Camilletti, R. C. and Loboda, M. J.., International Conference and Exhibition on Multichip Modules. (1995).
[2] Jeng, S.-P., Taylor, K. J., Chang, M.-C., Fattaruso, J., and Havemann, R. H.., VLSI Tech. Symp. Dig, on Tech. Papers, 6162 (1995).
[3] Ryan, E. T. Cho, T., Malik, I., Zhao, J.-H., Lee, J. K., and Ho, P. S.., In This Proceeding.
[4] Saif, M. T. A. and MacDonald, N. C.., Sensors and Actuators A. 52, 6575 (1996).

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