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Thermoelectric Properties of SiO2/SiO2+CoSb3Multi Nanolayered Films Modified by Me v Si ions Bombardment

  • S. Budak (a1), Cydale Smith (a2), John Chacha (a3), Marcus Pugh (a4), Kudus Ogbara (a5), Kaveh Heidary (a6), R. B. Johnson (a7), Claudiu Muntele (a8) and D. ILA (a9)...

Abstract

The performance of the thermoelectric devices and materials is shown by a dimensionless figure of merit, ZT = S2σT/K, where S is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature and K is the thermal conductivity. ZT can be increased by increasing S, increasing σ or decreasing K. We have prepared 100 alternating nanolayered films of SiO2/SiO2+CoSb3 using the ion beam assisted deposition (IBAD). The 5 MeV Si ions bombardments have been performed using the AAMU Pelletron ion beam accelerator to make quantum clusters in the nanolayered superlattice films at the three different fluences to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and cross plane electrical conductivity. We have characterized 100 alternating nanolayered films of SiO2/SiO2+CoSb3 before and after Si ion bombardments as we measured the cross-plane Seebeck coefficient, the cross-plane electrical conductivity, and the cross-plane thermal conductivity for three different fluences.

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Corresponding author

*Corresponding author: S. Budak; Tel.: 256-372-5894; Fax: 256-372-5855; Email: satilmis.budak@aamu.edu

References

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