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Thermoelectric Properties of Hot-Pressed GaN and InN

Published online by Cambridge University Press:  01 February 2011

A. Yamamoto  and
S. Yamaguchi
A. Yamamoto
Affiliation:
Energy Electronics Institute, National Institute of Advanced Industrial Science and Technology (AIST), Japan
S. Yamaguchi
Affiliation:
Energy Electronics Institute, National Institute of Advanced Industrial Science and Technology (AIST), Japan Department of Electrical, Electronic and Information Engineering, Kanagawa University, Japan
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Abstract

An attempt was made to obtain bulk III-nitride semiconductors such as InN, GaN and InxGa1−xN alloy using hot-press method in order to test their high temperature thermoelectric properties. The Seebeck coefficient and the resistivity were –10μV/K and 1.8×10−6 Ωm for InN, and –50μV/K and 1.9×10−4 Ωm for GaN at 300K, respectively. Thermal conductivity determined by laser flash method with porosity correction was 17W/mK for InN and 2.6W/mK for GaN. For InN the Seebeck coefficient and the resistivity increased monotonously with increasing temperature, which indicates that InN is a metal or a degenerately doped semiconductor. The power factor and the figure of merit were 2.1 × 10−4 W/mK2 and 1.5×10−5 K−1 for InN and 6.9 × 10−5 W/mK2 and 2.6×10−5 K−1 for GaN at 650K, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 793: Symposium S – Thermoelectric Materials 2003 - Research and Applications , 2003 , S8.24
Copyright
Copyright © Materials Research Society 2004

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