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Thermoelectric Properties of Half-Heusler Compounds N-type MNiSn and P-type MPtSn (M = Hf, Zr)

  • Yoshisato Kimura (a1), Tomoya Kuji (a2), Akihisa Zama (a3), Taiki Lee (a4) and Yoshinao Mishima (a5)...

Abstract

To design and to develop Half-Heusler based high-temperature thermoelectric materials, thermoelectric properties of n-type MNiSn and p-type MPtSn (M = Hf, Zr) were investigated based on two respective strategies. For the n-type (Hf, Zr)NiSn, a combined process of optical floating zone melting and hot-pressing was applied aiming to reduce thermal conduction through the lattice contribution. For the p-type HfPtSn, power factor and hence figure of merit ZT were dramatically improved by the p-type doping of Ir and Co targeting for Pt-site, which effectively lower electrical resistivity. The additions of Ir and Co are expected not only to increase carrier concentration but also to suppress the lattice thermal conduction by substituting for Pt.

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1. Aliev, F. G., Brandt, N. B., Moshchalkov, V. V., Kozyrkov, V. V., Skolozdra, R. V. and Belogorokhov, A. I., Z. Phys. B: Condens. Matter 75, 167 (1989).10.1007/BF01307996
2. Tritt, T. M., Bhattacharya, S., Xia, Y., Ponnambalam, V., Poon, S. J. and Thadhani, N., Appl. Phys. Lett. 81, 43 (2002).
3. Katayama, T., Kim, S.-W., Kimura, Y. and Mishima, Y.: J. Electronic Mater., 32, 1160 (2003).10.1007/s11664-003-0006-5
4. Hayashi, Y., Kim, S.-W., Kimura, Y. and Mishima, Y.: Proc. of TMS Proc. on Advanced Materials for Energy Conversion II, TMS, Warrendale, 367 (2004).
5. Kim, S.-W., Kimura, Y. and Mishima, Y., ibid., 377 (2004).
6. Kimura, Y., Kuji, T., Zama, A., Shibata, Y. and Mishima, Y., MRS Proc., 886, 331 (2006).
7. Kimura, Y. and Zama, A., Appl. Phys. Lett. 89, 172110 (2006).10.1063/1.2364721
8. Uher, C., Yang, J, Hu, S., Morelli, D. T. and Meisner, G. P., Phys. Rev. B, 59, 8615 (1999).10.1103/PhysRevB.59.8615
9. Katsuyama, S., Matsushima, H. and Ito, M., J.Alloys and Compounds, 385, 232 (2004).10.1016/j.jallcom.2004.02.061
10. Kurosaki, K., Maekawa, T., Muta, H. and Yamanaka, S., ibid., 397, 296 (2005).
11. Fistul', V. I., Heavily doped semiconductors, Plenum Press, New York, 77, (1969).10.1007/978-1-4684-8821-0_4
12. Abeles, B., Phys. Rev. B, 29, 1906, (1963).10.1103/PhysRev.131.1906

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Thermoelectric Properties of Half-Heusler Compounds N-type MNiSn and P-type MPtSn (M = Hf, Zr)

  • Yoshisato Kimura (a1), Tomoya Kuji (a2), Akihisa Zama (a3), Taiki Lee (a4) and Yoshinao Mishima (a5)...

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