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Thermoelectric properties of Bi2Te3 based thin films fabricated by pulsed laser deposition

Published online by Cambridge University Press:  01 February 2011

Shun Higomo ,
Takashi Yagi ,
Haruhiko Obara ,
Atsushi Yamamoto ,
Kazuo Ueno ,
Tsutomu Iida ,
Naoyuki Taketoshi  and
Tetsuya Baba
Shun Higomo
Affiliation:
s.higomo@aist.go.jp, Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
Takashi Yagi
Affiliation:
t-yagi@aist.go.jp, National Institute of Advanced Industrial Science and Technology, National Metrology Institute of Japan, AIST Tsukuba Central 3, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
Haruhiko Obara
Affiliation:
h.obara@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Energy Technology Research Institute, AIST Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
Atsushi Yamamoto
Affiliation:
a.yamamoto@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Energy Technology Research Institute, AIST Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
Kazuo Ueno
Affiliation:
ueno.kazuo@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Energy Technology Research Institute, AIST Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
Tsutomu Iida
Affiliation:
tsutomu@rs.noda.tus.ac.jp, Tokyo University of Science, Department of Material Science and Technology, Faculty of Industrial Science and Technology, 2641 Yamazaki, Noda, Chiba, 278-8501, Japan
Naoyuki Taketoshi
Affiliation:
n-taketoshi@aist.go.jp, National Institute of Advanced Industrial Science and Technology, National Metrology Institute of Japan, AIST Tsukuba Central 3, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
Tetsuya Baba
Affiliation:
t.baba@aist.go.jp, National Institute of Advanced Industrial Science and Technology, National Metrology Institute of Japan, AIST Tsukuba Central 3, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
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Abstract

Bi2Te3-based thin films were fabricated on glass substrates by the pulsed laser deposition (PLD) method. The vapor pressures of Bi and Te are significantly different, so controlling the stoichiometric composition is difficult when using conventional physical vapor deposition techniques, and the thermoelectric properties of Bi2Te3 films are sensitive to the film composition. PLD is a promising technique for the fabrication of telluride-based films such as Bi2Te3 due to its superior capability for controlling the film composition. Another advantage of PLD is the flexibility that it allows in terms of atmosphere in the reaction chamber; high concentrations of gases such as oxygen or argon can be introduced. We have measured various compositions of Bi2Te3 based films, and have identified the optimal compositions for both n-type and p-type material. The thermal conductivities of these Bi2Te3 films were evaluated by an exact measuring system, and the results were twice as low as those of conventional bulk materials. These results suggest that PLD has significant advantages for the deposition of in-plane Bi2Te3-based thin films.

Keywords

laser ablationthermal conductivityTe
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1044: Symposium U – Thermoelectric Power Generation , 2007 , 1044-U09-08
Copyright
Copyright © Materials Research Society 2008

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References

1. Scherrer, H., Scherrer, S., CRC Handbook of Thermoelectrics (ed. Rowe, D. M.) 212–237 (CRC Press, Boca Raton, FL, 1995).Google Scholar
2. Kullmann, W., Geurts, J., Richter, W. et al. , Phys. Status Solidi (b), 125, 131, 1984.Google Scholar
3. Scherrer, H., Scherrer, S., CRC Handbook of Thermoelectrics (ed. Rowe, D. M.) 218 (CRC Press, Boca Raton, FL, 1995).Google Scholar
4. Black, J., Conwell, E. M., Seigle, L., and Spencer, C. W., J. Phys. Chem. Solids, 2, 240, 1957.Google Scholar
5. Austin, I. G., Proc. Phys. Rev. 72, 545, 1985.Google Scholar
6. Austin, I. G., and Sheard, A., J. Electron. Contrib., 3, 236, 1957.Google Scholar
7. Venkatasubramanian, R., Siivola, E., Colopitts, T., and O'Quinn, B., Nature 413 p.597 (2001).Google Scholar
8. Venkatasubramanian, R., Phys. Rev. B 61, p.3091 (2000).Google Scholar
9. Baba, T., Proceedings of Workshop on Thermal Investigations of ICs and Systems (Therminic 2004), Sophia Antipolis, France, 29 September - 1 October 2004, pp. 241-249.Google Scholar
10. Taketoshi, N., Baba, T. and Ono, A., “Observation of heat diffusion across submicrometer thin films using a picosec-ond thermoreflectance technique”, Jpn. J. Appl. Phys., 38, 11, 1268–1271, 1999.Google Scholar
11. Higomo, S., Obara, H., Yamamoto, A., Ueno, K., and Iida, T., Proc. of the 26th Inter. Conf. on Thermoelectrics, (Jeju, 2007) to be republished.Google Scholar
12. Makala, R. S., Jagannadham, K., and Sales, B. C., J. Appl. Phys., 94, 6. 3907–3918, 2003.Google Scholar
13. Stary, Z., Horak, J., Stordeur, M., and Stolzer, M., J. Phys. Chem. Solids, 49, 1, 29–34, 1988.Google Scholar
14. Feutelais, Y., Legendre, B., Rodier, N., and Agafanov, V., Materials Research Bulletin, 28, pp.591–596, 1993.Google Scholar
15. Barin, I., Thermochemical Data of Pure Substances, 1993, Weinheim:VCH.Google Scholar
16. Ferhat, M., Tedenac, J. C., Nagao, J., J. Crystal Growth, 218, pp.250–258, 2000.Google Scholar