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Thermoelectric Power Devices Based on InN Thin Films

  • Takayuki Matsumoto (a1), Shigeo Yamaguchi (a2) and Atsushi Yamamoto (a3)

Abstract

We have studied the temperature dependence of thermoelectric properties of amorphous InN thin films prepared by reactive radio-frequency sputtering. We fabricated 60-pair and 120-pair InN-chromel films, which were deposited on polyimide films. For the 120-pair device, the maximum open output voltage and the maximum output power were 210 mV and 65 nW, respectively, at temperature difference of 168 K.

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1. Yamaguchi, S., Iwamura, Y., and Yamamoto, A., Appl. Phys. Lett. 82, 2065 (2003).
2. Yamaguchi, S., Izaki, R., Yamagiwa, K., Taki, K., Iwamura, Y., and Yamamoto, A., Appl. Phys. Lett. 83, 5398 (2003).
3. Izaki, R., Kaiwa, N., Hoshino, M., and Yaginuma, T., Yamaguchi, S., and Yamamoto, A., Appl. Phys. Lett. 87, 243508 (2005).
4. Fritzshe, H. and Pollak, M., ed., HOPPING AND RELATED PHENOMENA, in Advances in Disordered Semiconductors-vol. 2, World Scientific Publishing, Singapore, 1990.

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