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Thermodynamic Predictions of Phase Stability and Crystallization Temperature of Silicon-Based Amorphous Alloys

Published online by Cambridge University Press:  01 January 1993

J.R.A. Carlsson ,
X.H. Li ,
S.F. Gong  and
H.T.G. Hentzell
J.R.A. Carlsson
Affiliation:
Thin Film Division, Department of Physics and Measurement Technology, Linköping University, S-58183 Linköping, Sweden
X.H. Li
Affiliation:
Thin Film Division, Department of Physics and Measurement Technology, Linköping University, S-58183 Linköping, Sweden
S.F. Gong
Affiliation:
Thin Film Division, Department of Physics and Measurement Technology, Linköping University, S-58183 Linköping, Sweden
H.T.G. Hentzell
Affiliation:
Thin Film Division, Department of Physics and Measurement Technology, Linköping University, S-58183 Linköping, Sweden
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Abstract

A thermodynamic calculation of Si-X alloys has been carried out, where X is any element from group III or V. Free-energy diagrams for those systems have been established. A comparison between thermodynamic predictions and experimental results is carried out for the Si-B and the Si-Sb alloys. It is found that the agreement between theory and experimental results for the free- energy diagrams and for the crystallization temperature predictions are good. The model and the different features for the various elements are described in detail.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 527
Copyright
Copyright © Materials Research Society 1993

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References

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