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A Thermodynamic Model for the Hydrogen Incorporation in PECVD Silicon Oxynitrides Thin Layers

  • Y. Cros (a1), S. Viscaïno (a1), W. M. Arnold Bik (a2) and F. H. P. M. Habraken (a2)

Abstract

In the PECVD SixNyHzOw the hydrogen is principally incorporated as N-H bonds. For O/(O+N) below 0.4, the %H is constant at 25%; from 0.4 to 1, it decreases to 4%. We show that a chemical ordered model is likely to describe the hydrogen incorporation in the amorphous network while a random bond model fails.

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1 Viscaïno, S., phD thesis, Université Joseph Fourier de Grenoble I, France, 1992.
2 Bik, W. A., thesis, Utrecht University, The Netherlands, 1992.
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11 JANAF Thermochemical Tables, 2nd ed., edited by Stull, D. R. and Prophet, H. (U.S. GPO, Washington DC, 1971).

A Thermodynamic Model for the Hydrogen Incorporation in PECVD Silicon Oxynitrides Thin Layers

  • Y. Cros (a1), S. Viscaïno (a1), W. M. Arnold Bik (a2) and F. H. P. M. Habraken (a2)

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