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Thermal-Radiation Absorption Characteristics of Patterned Wafers During Rapid Thermal Processing

Published online by Cambridge University Press:  22 February 2011

Peter Y. Wong  and
Ioannis N. Miaoulis
Peter Y. Wong
Affiliation:
Thermal Analysis of Materials Processing Laboratory Mechanical Engineering DepartmentTufts University, Medford, MA 02155
Ioannis N. Miaoulis*
Affiliation:
Thermal Analysis of Materials Processing Laboratory Mechanical Engineering DepartmentTufts University, Medford, MA 02155
*
Author to whom al correspondence should be addressed
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Abstract

Microscale radiation effects are responsible for the dependence of absorption and temperature distributions on the geometry of the layering structures and the spectral characteristics of the heat source. The effect of patterned wafers, which may contain several different structures and materials, on the wafer absorption characteristics are investigated for rapid thermal processing. A numerical model to determine the thermal radiative absorptivity of the wafer for different structures and materials is presented for different heating conditions. The resulting transient effects are determined numerically for different rapid thermal processes. The changes in radiative properties for rapid thermal annealing and chemical vapor deposition are investigated for patterned wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 395
Copyright
Copyright © Materials Research Society 1994

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