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Thermally stable transparent Ru-Si-O Schottky contacts for n-type GaN and AlGaN
Published online by Cambridge University Press: 01 February 2011
Abstract
We have developed the deposition and studied the electrical characteristics and thermal reliability of Ru-based contacts on n- type GaN as well as on AlGaN/GaN heterostructure. Amorphous, conducting and transparent RuSiO4 contacts with their extremely low reverse currents and thermal stability up to 900°C, show great potential for use as Schottky contacts to n-type GaN and gate electrodes for AlGaN/GaN HEMT in high temperature, high power applications as well as in UV detectors.
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- Copyright © Materials Research Society 2005