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Thermal Transformation of Hydrogen Bonds in a-SiC:H Films: Structural and Optical Properties

Published online by Cambridge University Press:  01 February 2011

Andrey V. Vasin ,
Sergey P. Kolesnik ,
Andrey A. Konchits ,
Vladimir S. Lysenko ,
Alexey N. Nazarov ,
Andrey V. Rusavsky  and
S. Ashok
Andrey V. Vasin
Affiliation:
Lashkaryov Institute of Semiconductor Physics, Kiev. Ukraine
Sergey P. Kolesnik
Affiliation:
Lashkaryov Institute of Semiconductor Physics, Kiev. Ukraine
Andrey A. Konchits
Affiliation:
Lashkaryov Institute of Semiconductor Physics, Kiev. Ukraine
Vladimir S. Lysenko
Affiliation:
Lashkaryov Institute of Semiconductor Physics, Kiev. Ukraine
Alexey N. Nazarov
Affiliation:
Lashkaryov Institute of Semiconductor Physics, Kiev. Ukraine
Andrey V. Rusavsky
Affiliation:
Lashkaryov Institute of Semiconductor Physics, Kiev. Ukraine
S. Ashok
Affiliation:
The Pennsylvania State University, University Park, USA
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Abstract

Hydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited using magnetron sputtering technique. Investigation of the effect of the vacuum annealing temperature on photoluminescence properties and paramagnetic defects, and its correlation with structural transformation of a-SiC:H have been performed. Significantly enhanced light emission efficiency after low-temperature vacuum treatment (450 °C) is found due to enhanced passivation of paramagnetic defects associated with carbon-rich chemically disordered structure. Subsequent high-temperature vacuum annealing results in a decrease of luminescent intensity that is associated with increase of carbon related paramagnetic defect states, shown to be the primary nonradiative recombination centres. For the first time silicon-related dangling bonds in a-SiC:H have been detected reliably by electron paramagnetic resonance measurements in annealed samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E9.37
Copyright
Copyright © Materials Research Society 2005

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