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Thermal Stabilttx of Hxdrogbnation Processes into Multicrystalline Silicon

Published online by Cambridge University Press:  03 September 2012

Jean-Claude Muller ,
Bouchalb Hartiti ,
Hussain Younis  and
Paul Siffert
Jean-Claude Muller
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n°292), HP 20, F-67037 Strasbourg Cedex 2, France
Bouchalb Hartiti
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n°292), HP 20, F-67037 Strasbourg Cedex 2, France
Hussain Younis
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n°292), HP 20, F-67037 Strasbourg Cedex 2, France
Paul Siffert
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n°292), HP 20, F-67037 Strasbourg Cedex 2, France
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Abstract

We have compared, for multicrystalline silicon solar cells, the neutralization efficiency of low energy hydrogen ion implantation to those resulting from the deposition of hydrogenated silicon nitride and determined the optimal temperature in order to have the most important improvement of the bulk diffusion length LD.

In particular, the concentration profile of the introduced hydrogen has been determined by means of Elastic Recoil Detection (ERD) or nuclear reaction analysis and the electrical effects of the hydrogen investigated by the Surface PhotoVoltage (SPV) technique.

At least, the stability of the LD improvement after post-thermal treatments around 400°C and at higher temperatures has been studied for two annealing modes using a classical (15 min) or a rapid lamps furnace (25 sec).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 383
Copyright
Copyright © Materials Research Society 1992

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References

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