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Thermal Stability of Sputter Deposited Tantallum Silicide Films

  • G. A. Dixit (a1), R. Sundaresan (a1), F. S. Chen (a1), Y. S. Lin (a1), C. C. Wei (a1) and F. T. Liou (a1)...

Abstract

Tantallum silicide films were sputter deposited from targets with different Si/Ta stoichiometries. The films were then subjected to thermal treatments. Silicon precipitation was observed on films deposited from silicon rich targets. The effects of silicon precipitates on device characteristics was studied. A method to suppress silicon precipitation is reported.

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References

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1. Murarka, S. P., J. Vac. Sci. Technol., 17, 775 (1980).
2. Murarka, S. P., Silicides for VLSI Applications, (Academic Press, 1983).
3. Murarka, S. P. and Fraser, D. B., J. Appl. Phys. 51, 342 (1980).
4. Murarka, S. P. and Fraser, D. B., J. Appl. Phys. 51, 350 (1980).
5. Moffat, W. G., The Handbook of Binary Phase Diagrams, (General Electric Co., Schenectady, New York, 1982).
6. Murarka, S. P., Fraser, D. B., Lindenberger, W. S. and Sinha, A. K., J. Appl. Phys. 51, 3241 (1980).

Thermal Stability of Sputter Deposited Tantallum Silicide Films

  • G. A. Dixit (a1), R. Sundaresan (a1), F. S. Chen (a1), Y. S. Lin (a1), C. C. Wei (a1) and F. T. Liou (a1)...

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