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Thermal Stability of Ru Gate Electrode on HfSiO Dielectric

Published online by Cambridge University Press:  01 February 2011

Karol Frohlich ,
Juan Pedro Espinos ,
Andrej Vincze ,
Milan Tapajna  and
Kristina Husekova
Karol Frohlich
Affiliation:
karol.frohlich@savba.sk, Institute of Electrical Engineering, SAS, Dept. of Thin Oxide Films, Dubravska 9, Bratislava, Slovakia, 841 04, Slovakia, 00 421 2 54 77 58 06, 00 421 2 54 77 58 16
Juan Pedro Espinos
Affiliation:
jpespinos@icmse.csic.es, Instituto de Ciencia de Materiales de Sevilla, CSIC, Avda. Americo Vespucio, Sevilla, Spain, 410 92, Spain
Andrej Vincze
Affiliation:
andyvincze@yahoo.com, International Laser Centre,, Ilkovicova 3, Bratislava, Slovakia, 812 19, Slovakia
Milan Tapajna
Affiliation:
milan.tapajna@stuba.sk, Institute of Electrical Engineering, SAS, Dubravska 9, Bratislava, Slovakia, 841 04, Slovakia
Kristina Husekova
Affiliation:
Kristina.Husekova@savba.sk, Institute of Electrical Engineering, SAS, Dubravska 9, Bratislava, Slovakia, 841 04, Slovakia
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Abstract

We have investigated advanced MOS structures containing Ru gate electrode, HfxSi1-xOy dielectric film and Si substrate. The Ru gate electrode was grown by MOCVD at 300 °C. The MOS structures were annealed for 30 min in forming gas and nitrogen at temperatures up to 550 °C. Capacitance-voltage measurements showed important shift of the flat band voltage of the Ru/ HfxSi1-xOy/Si gate stack after treatment at 550 °C. X-ray photoemission spectroscopy (XPS), ultraviolet photoemission spectroscopy (UPS), reflection electron energy loss spectroscopy (REELS) and secondary ion mass spectroscopy (SIMS) were used to analyze interface between ruthenium and high-k dielectric film. Based on the analysis we were able to build up energy-band alignement for the Ru/ HfxSi1-xOy interface. We observed that the energy-band structure of the Ru/HfxSi1-xOy interface remains stable upon annealing in forming gas up to 550 °C. Presence of hydrogen revealed by SIMS can account for compensation of negative charges in HfxSi1-xOy during thermal treatment.

Keywords

Ruoxidex-ray photoelectron spectroscopy (XPS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 917: Symposium E – Gate Stack Scaling – Materials Selection, Role of Interfaces, and Reliability Implications , 2006 , 0917-E05-02
Copyright
Copyright © Materials Research Society 2006

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