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Thermal Stability of Reactively Sputtered TiN on InP as a Diffusion Barrier

  • Zhengda Pang (a1), Mohamed Boumerzoug (a1), Roman V. Kruzelecky (a1), Peter Mascher (a1) and John G. Simmons (a1)...

Abstract

The stability of rcactively sputtered TiN films on InP for application as a diffusion barrier has been examined using electrical measurements, Auger profiling and scanning electron microscopy (SEM). The samples were subjected to rapid-thermal-annealing (RTA) in a N2 atmosphere at temperatures between 400°C and 900°C. The SEM pictures of “as deposited” and RTA stoichiometric films show that the morphology is smooth, fine-grained and stable until 800°C. Auger depth profiling shows little interdiffusion between TiN and InP for RTA below 800°C. Annealing at temperatures of about 700°C reduces the sheet resistance of TiN relative to the “as-deposited” films by about 50%. Annealing at temperatures above 800°C results in a large sheet resistance. This may be associated with the deterioration of the TiN/InP morphology at high anneal temperatures as observed by SEM.

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Thermal Stability of Reactively Sputtered TiN on InP as a Diffusion Barrier

  • Zhengda Pang (a1), Mohamed Boumerzoug (a1), Roman V. Kruzelecky (a1), Peter Mascher (a1) and John G. Simmons (a1)...

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