Hostname: page-component-77c89778f8-fv566 Total loading time: 0 Render date: 2024-07-18T01:51:31.294Z Has data issue: false hasContentIssue false

Thermal Stability of CoSi2 on Single Crystal and Polycrystalline Silicon

Published online by Cambridge University Press:  21 February 2011

J. R. Phillips
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca NY 14853
P. Revesz
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca NY 14853
J. O. Olowolafe
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca NY 14853
J. W. Mayer
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca NY 14853
Get access

Abstract

The thermal stability of Co silicide on single crystal and polycrystalline Si has been investigated. Co films were evaporated onto (100) Si and undoped polycrystalline Si and annealed in vacuum. Resulting silicide films were examined using Rutherford backscattering spectroscopy, scanning electron microscopy, electron—induced x—ray spectroscopy, and sheet resistivity measurements. We find that CoSi2 on single crystal (100) Si remains stable through 1000ºC. In contact with undoped polycrystalline Si, intermixing begins at temperatures as low as 650ºC for 30min annealing. The Co silicide and Si layers are intermixed after 750ºC 30min annealing, giving islands of Si surrounded by silicide material, with both components extending from the surface down to the underlying oxide layer. The behavior of CoSi2 contrasts with results reported for TiSi2 which agglomerates on single crystal Si around 900ºC but is stable on polycrystalline silicon as high as 800ºC. Resistivity measurements show that the Co silicide remained interconnected despite massive incursion by Si into the silicide layer.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ting, C.Y., d'Heurle, F.M., Iyer, S.S., and Fryer, P.M., J. Electrochem. Soc. Abs. 85–1, 387 (1985).Google Scholar
2. Revesz, P., Zheng, L.R., Hung, L.S., and Mayer, J.W., Applied Phys. Lett. 48, 1591 (1986).Google Scholar
3. Wong, C.Y., Wang, L.K., McFarland, P.A., and Ting, C.Y., J. Appl. Phys. 60, 243 (1986).10.1063/1.337688Google Scholar
4. Zheng, L.R., Hung, L.S., Feng, S.Q., Revesz, P., Mayer, J.W., and Miles, G., Appl. Phys. Lett. 48, 769 (1986).Google Scholar
5. Doolittle, L.R., Nucl. Instr. Meth. B9, 344 (1985).10.1016/0168-583X(85)90762-1Google Scholar
6. Vaidya, S., Murarka, S.P., and Sheng, T.T., J. Appl. Phys. 58, 971 (1985).10.1063/1.336176Google Scholar
7. Murarka, S.P., Chang, C.C., and Adams, A.C., J. Vac. Sci. Technol. B5, 865 (1987).10.1116/1.583681Google Scholar
8. Lau, S.S., Mayer, J.W., and Tseng, W., in Handbook on Semiconductors, Vol. 3, ed. Keller, S.P., Ch.8, North-Holland, 1980.Google Scholar
9. Zheng, L.R., Phillips, J.R., Revesz, P., and Mayer, J.W., Nucl. Instru. Methods B 19/20, 598 (1987).10.1016/S0168-583X(87)80120-9Google Scholar