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Thermal Pulse Annealing of Hg1−xCdxTe

  • K. C. Dimiduk (a1), W. G. Opyd (a1), M. E. Greiner (a1), J. F. Gibbons (a1) and T. W. Sigmon (a1)...

Abstract

Thermal pulse annealing has been used to modify the near surface of Hg1−xCdxTe. Using anneals of approximately 260°C for seven seconds, the crystal quality of epitaxial HgCdTe surfaces can be improved as observed by MeV He+ ion channeling. Similar anneals have also been used to repair the damage resulting from a 250 keV, 1015 11 B/cm2 implant into HgCdTe held at LN2. For higher temperatures and/or longer anneals, surface Hg loss is observed. Rutherford Backscattering measurements are used to measure this loss. The resulting loss rate data is described by No= A exp (−ΔE/kT) where A and ΔE depend on the material composition with A = 1029, ΔE = 1.8 eV and A = 1036, ΔE = 2.6 eV for x = 0.23 and 0.4, respectively.

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Thermal Pulse Annealing of Hg1−xCdxTe

  • K. C. Dimiduk (a1), W. G. Opyd (a1), M. E. Greiner (a1), J. F. Gibbons (a1) and T. W. Sigmon (a1)...

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