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Thermal Profiles in Silicon-On-Insulator (Sod Material Recrystallized With Scanning Light Line Sources

Published online by Cambridge University Press:  25 February 2011

Katsuhiko Kubota ,
Charles E. Hunt  and
Jeffrey Frey
Katsuhiko Kubota
Affiliation:
on leave from Hitachi, LTD, Musashi Works, TokyoJAPAN
Charles E. Hunt
Affiliation:
Cornell University School of Electrical Engineering, Ithaca, NY 14853
Jeffrey Frey
Affiliation:
Cornell University School of Electrical Engineering, Ithaca, NY 14853
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Abstract

A two dimensional solution of the classical heat equation is obtained and used to predict thermal profiles during line source zone melting recrystallization of silicon on insulators. A macroscopic solidification model is used to find the extent of the molten zone in multilayered structures. The problems of convergence associated with moving phase boundaries are reduced by using transformed temperature and the enthalpy model The resultant isotherms, obtained at varying zone scan speeds, indicate optimum experimental conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 629
Copyright
Copyright © Materials Research Society 1985

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References

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