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Thermal Modulated Esr For The Study Of Defects In a-SiC:H Films

  • F. Demichelis (a1), F. Giorgis (a1), C. F. Pirri (a1), E. Tresso (a1), L. Ravera (a2) and V. Rigato (a3)...


In this work we present Thermal Modulation Electron Spin Resonance Measurements performed on a-SiC:H films prepared by Plasma Enhanced Chemical Vapour Deposition with energy gap in the range 1.8–2.5 eV. The results have been compared with previously obtained photothermal and photoconductive ones and have been interpreted by means of a defect distribution which takes into account both silicon based and carbon based defects.



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