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A Thermal Equilibrium Model for the Dopant and Defect Structure in a-Si:H
Published online by Cambridge University Press: 26 February 2011
Abstract
Our previous thermal equilibrium approach, based on the assumption of an intrinsic relaxation mechanism, has been evaluated on a quantitative scale. The predictions of this model are compared to experimental defect density data and a microscopic description of the thermalization process is presen-ted.
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- Copyright © Materials Research Society 1988
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