Hostname: page-component-76fb5796d-vvkck Total loading time: 0 Render date: 2024-04-25T07:32:15.544Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal Equilibrium Defects in Hydrogenated Amorphous Silicon Based Alloy Films

Published online by Cambridge University Press:  25 February 2011

Xixiang Xu ,
Akiharu Morimoto ,
Minoru Kumeda  and
Tatsuo Shimizu
Xixiang Xu
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Akiharu Morimoto
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Minoru Kumeda
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Tatsuo Shimizu
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Get access

Abstract

Both the temperature dependence at elevated temperature and the increase after fast cooling from elevated temperature of the density of dangling bonds are measured by ESR for undoped hydrogenated amorphous silicon–based alloy films, a–Si:H, a–Si1−xCx:H, a–Si1−xNx:H and a–Si1−xOx:H. Both a–Si:H and a–Si1−xCx:H clearly show the increase in the density of dangling bonds at elevated temperature, while the increase is less prominent for a–Si1−xNx:H and a–Si1−xOx:H. The observed results for both a–Si:H and a–Si1−xCx:H are fairly well reproduced by the model recently proposed by Smith et al. The results of CPM measurements combined with those of ESR measurements suggest that the density of charged dangling bonds present in undoped a–Si:H also increases after fast cooling from elevated temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 143
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Smith, Z E., and Wagner, S., Phys. Rev. B 32, 5510 (1985).CrossRefGoogle Scholar
2. Street, R. A., Kakalios, J., Tsai, C. C., and Hayes, T. M., Phys. Rev. B 35, 1316 (1987).Google Scholar
3. Stutzmann, M., Phys. Rev. B 35, 9735 (1987).CrossRefGoogle Scholar
4. McMahon, T. J., and Tsu, R., Appl. Phys. Lett. 41, 412 (1987).Google Scholar
5. Street, R. A., Hack, M., and Jackson, W. B., Phys. Rev. B 37, 4209 (1988).Google Scholar
6. Smith, Z.E., Aljishi, S., Slobodin, D., Chu, V., and Wagner, S., Phys. Rev. Lett. 57, 2450 (1986).Google Scholar
7. Xu, X., Morimoto, A., Kumeda, M., and Shimizu, T., Appl. Phys. Lett. 52, 622 (1988).Google Scholar
8. Kakalios, J., Street, R. A., and Jackson, W. B., Phys. Rev. Lett. 59, 1037 (1987).Google Scholar
9. Meaudre, R., Jensen, P., and Meaudre, M., Phys. Rev. B 38, 12449 (1988).Google Scholar
10. Xu, X., Okumura, A., Morimoto, A., Kumeda, M., and Shimizu, T., Phys. Rev. B 38, 8371 (1988).Google Scholar
11. Smith, Z. E., and Wagner, S., in Amorphous Silicon and Related Materials, edited by H. Fritzsche (1988) p.409.Google Scholar
12. Shimizu, T., Xu, X., Kidoh, H., Morimoto, A., and Kumeda, M., J. Appl. Phys. 64, 5045 (1988).Google Scholar
13. Shimizu, T., Kidoh, H., Morimoto, A., and Kumeda, M., Jpn. J. Appl. Phys. 28, No.4(1989).Google Scholar
14. Smith, Z. E., and Wagner, S., Phys. Rev. Lett. 59, 688 (1987).Google Scholar
15. Okushi, H., private communication.Google Scholar