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Thermal Equilibration and Growth of Doped Amorphous Silicon

  • J. Kakalios (a1), R. A. Street (a1), C. C. Tsai (a1) and R. Weisfield (a1)


The relation between the thermal equilibration of the defect structure in n-type doped hydrogenated amorphous silicon (a-Si:H) and the deposition conditions has been investigated. When the deposition rate is increased by raising the rf power the equilibration time constants become longer, though the thermal equilibrium processes are qualitatively similar to those in samples grown under optimal conditions. Models relating the slower equilibration rate to the deposition-induced microstructure are explored.



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