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Thermal Desorption of Deuterium from GaN(0001)

Published online by Cambridge University Press:  21 March 2011

Y. Yang ,
J. Lee ,
B. D. Thoms ,
D. D. Koleske  and
R. L. Henry
Y. Yang
Affiliation:
Georgia State University, Atlanta, GA
J. Lee
Affiliation:
Georgia State University, Atlanta, GA
B. D. Thoms
Affiliation:
Georgia State University, Atlanta, GA
D. D. Koleske
Affiliation:
Naval Research Laboratory, Washington, DC
R. L. Henry
Affiliation:
Naval Research Laboratory, Washington, DC
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Abstract

The recombinative desorption of deuterium from GaN(0001) has been investigated using temperature programmed desorption (TPD) with variable heating rates. With a heating rate of 1°C/s, molecular deuterium desorption peaks at 410 C in agreement with related previous work. However, the shape of the curve indicates a secondary peak at around 280°C which is merged into the lower temperature shoulder of the dominant peak. By changing linear heating rate from 0.05 C/s to 8°C/s desorption peak temperatures from 380°C to 570°C were observed. Fitting to a pseudo-first-order desorption model results in a hydrogen desorption barrier, Ed, from surfaceof 1.1eV and a pre exponential factor, n, of 2 x 106s-1. Both are below expected values and are assumed to be due to a variation of desorption barrier heights. If a typical pre-exponential factor of 1 x 1013s-1is assumed, reanalysis of the desorption data produce a desorption barrier of 2.0 eV, in agreement with the existence of the surface adsorption barrier at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I6.48.1
Copyright
Copyright © Materials Research Society 2002

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