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Thermal and Ion-Assisted Reactions of Al0.3Ga0.7as with Molecular Chlorine

Published online by Cambridge University Press:  28 February 2011

M. Balooch ,
D. R. Olander  and
W. J. Siekhaus
M. Balooch
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory, and The Department of Nuclear Engineering, University of California, Berkeley, CA 94720
D. R. Olander
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory, and The Department of Nuclear Engineering, University of California, Berkeley, CA 94720
W. J. Siekhaus
Affiliation:
Chemistry Division of Lawrence Livermore National Laboratory, Livermore, CA 94550
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Abstract

Reaction of Al0 3Ga0 7As with molecular chlorine was studied with and without simultaneous bombardment by energetic argon ions.The reaction products signals were measured as functions of surface temperature.For the purely thermal reactions, the main products below 600 K were AlCl3, AsCl3 and GaCl3.The etching rates were two orders of magnitude lower than those of pure GaAs.With simultaneous ion bombardment, the reaction product signal of AsCl3 at room temperature increased by almost a factor of four over the corresponding thermal reaction signal.The comparable enhancement factor for pure GaAs was ∼6.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986 , 417
Copyright
Copyright © Materials Research Society 1986

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References

1. Hu, E.L. and Howard, R.E., J.Vac.Sci.Technol.B 2, 85 (1984).Google Scholar
2. Chinn, J.D..Fernandez, A., Adesida, I. and Wolf, E.D., J.Vac.Sci.Technol.A1, 701 (1983).Google Scholar
3. Lincoln, G.A., Geis, M.W., Pang, S., and Efremow, N.N., J.Vac.Sci.Technol.Bl, 1043 (1983).CrossRefGoogle Scholar
4. Balooch, M., Olander, D.R. and Siekhaus, W.J., accepted for publication in J.Vac.Sci.Technol.Google Scholar
5. Chen, C.L. and Wise, K.D., IEEE Trans.Electron Devices., ED–29 (1982)1522.Google Scholar
6. Pang, S.W., Lincoln, G.A., McClelland, R.W., DeGraff, P.D., Geis, M.W. and Piacentini, W.J., J.Vac.Sci.Technol., B1, 1334 (1983).Google Scholar
7. McNevin, S.C. and Becker, G.E., J.Appl: Phys.58, 4675 (1985).Google Scholar