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A Theoretical Study of Band Offset Modification at the InAs/GaAs Interface

  • T-H. Shen (a1) and C. C. Matthai (a1)

Abstract

We present the results of pseudopotential calculations on the InAs/GaAs system with and without interlayers of Ge at the interface. We find that the band alignment depends critically on the positioning of the interlayer at the interface and on the number of monolayers substituted. The results can be explained with recourse to a simple model based on charge transfer between the atoms across the interface.

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A Theoretical Study of Band Offset Modification at the InAs/GaAs Interface

  • T-H. Shen (a1) and C. C. Matthai (a1)

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