Skip to main content Accessibility help
×
Home

Theoretical Prediction of Zinc Blende Phase GaN Avalanche Photodiode Performance Based on Numerically Calculated Electron and Hole Impact Ionization Rate Ratio

  • J. Kolnik (a1), I. H. Oguzman (a1), K. F. Brennan (a1), R. Wang (a2) and P. P. Ruden (a2)...

Abstract

In this paper, we present the first calculations of the electron and hole initiated interband impact ionization rate in zinc blende phase GaN as a function of the applied electric field strength. The calculations are performed using an ensemble Monte Carlo simulator including the full details of the conduction and valence bands along with a numerically determined, wave-vector dependent interband ionization transition rate determined from an empirical pseudopotential calculation. The first four conduction bands and first three valence bands, which fully comprise the energy range of interest for device simulation, are included in the analysis. It is found that the electron and hole ionization rates are comparable over the full range of applied electric field strengths examined. Based on these calculations an avalanche photodiode, APD, made from bulk zinc blende GaN then would exhibit poor noise and bandwidth performance. It should be noted however, that the accuracy of the band structure employed and the scattering rates is presently unknown since little experimental information is available for comparison. Therefore, due to these uncertainties, it is difficult to unequivocally conclude that the ionization rates are comparable.

Copyright

References

Hide All
1. Mohammad, S. N., Salvador, A. A., and Morkoc, H., Proceedings of the IEEE, 83, 1306 (1995).
2. Nakamura, S., Mukai, T., and Senoh, M., Appl. Phys. Lett, 64, 1687 (1994).
3. McIntyre, R. J., IEEE Trans. Electron Dev., ED-13, 164 (1966).
4. Teich, M. C., Matsuo, K., and Saleh, B. E. A., QE-22, 1184 (1986).
5. Khan, M. A., Kuznia, J. N., Olson, D. T., Hove, J. M. Van, Blasingame, M., Leitz, L. F., Appl. Phys. Lett., 60, 2917 (1992).
6. Khan, M. A., Microwave Journal, 36, 69 (1993).
7. Chen, Q., Khan, M. A., Sun, C. J., Yang, J. W., Electronics Lett., 31, 1781 (1995).
8. Kolnik, J., Oguzman, I. H., Brennan, K. F., Wang, R., Ruden, P. P. and Wang, Y., J. Appl. Phys., 78, 1033 (1995).
9. Hinckley, J. M. and Singh, J., Phys. Rev. B, 41, 2912 (1990).
10. Chang, Y. C., Ting, D. Z.-Y., Tang, J. Y. and Hess, K., Appl. Phys. Lett., 42, 76 (1983).
11. Wang, R., Ruden, P. P., Kolnik, J., Oguzman, I., and Brennan, K. F., Proceedings of the MRS, Fall, 1995.
12. Sano, N. and Yoshii, A., Phys. Rev. B, 45, 4171 (1992).

Theoretical Prediction of Zinc Blende Phase GaN Avalanche Photodiode Performance Based on Numerically Calculated Electron and Hole Impact Ionization Rate Ratio

  • J. Kolnik (a1), I. H. Oguzman (a1), K. F. Brennan (a1), R. Wang (a2) and P. P. Ruden (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed