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Theoretical Investigation of Formation of (n-n+)-Junction in Ion-Implanted Crystalline Matrix

  • R. Peleshchak (a1), O. Kuzyk (a1) and H. Khlyap (a2)

Abstract

The paper reports results of theoretical calculations of the redistribution of electrons and electrostatic potential in the implanted crystalline matrix (100)-GaAs+Si(Ar) due to electrondeformation effects. The model requires a self-consistent solution of the set of following equations: 1)the time-independent Schroedinger equation; 2) the equation of mechanical equilibrium: 3) the Poisson equation for determining electrostatic potential distribution; 4) the equation for calculation of the electron concentration, and 5) the equation for the chemical potential calculation in the implanted system. The most important result is: it is shown that in the elastic region of the implanted matrix n-n +-junction is formed. Current-voltage characteristics of the junction are numerically simulated.

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Theoretical Investigation of Formation of (n-n+)-Junction in Ion-Implanted Crystalline Matrix

  • R. Peleshchak (a1), O. Kuzyk (a1) and H. Khlyap (a2)

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