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Theoretical and Experimental Description of Interface Structure

  • R. Hull (a1), K. W. Carey (a1) and G. A. Reid (a1)


We define the Interface between two dissimilar materials by two functions, g(z) and f(x,y), representing the diffuseness along the interface normal and the distribution of interface non-planarities respectively. We show how these functions may be measured for the case of epitaxial interfaces between dissimilar crystals by quantitative analysis of lattice structure images obtained by high resolution transmission electron microscopy. Experimental examples are drawn from the GeSi/Si, InGaAs/InAlAs and InGaAs/InP systems. Correlations between interface structure and optical and electronic properties of these systems are discussed.



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[1] Goodman, P. and Moodie, A.F., Acta Crysta A30, 280 (1974)
[2] See, for example, Spence, J.C.H., Experimental High Resolution Electron Microscopy (Clarendon, Oxford, 1981)
[3] Hull, R., Bean, J.C., Gibson, J.M., Marcantonio, K.J., Fiory, A.T. and Nakahara, S., Mat. Res. Proc. Soc. 37, ed. Gibson, J.M. and Dawson, L.R. (Materials Research Socity, Pittsburgh, PA 1985), p. 261
[4] Bean, J.C., Feldman, L.C., Fiory, A.T., Nakahara, S. and Robinson, I.K., J. Vac. Sci. Technol. A2, 436 (1984)
[5] Hull, R., Carey, K.W., Fouquet, J.E., Reid, G.A., Bimberg, D. and Oertel, D., to be published in Proceedings of the 13th International Symposium on GaAs and Related Compounds, Las Vegas, NV, Sep. 1986
[6] Juhl, A., Oertel, D., Maczey, C., Bimberg, D., Carey, K.W., Hull, R. and Reid, G. A., to be published in Proceedings of the 2nd International Conference on Superlattices, Microstructures and Microdevices, Goteborg, Sweden, 1986


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