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Theoretical Analysis of Homogeneity and Surface Degradation During Pulsed Electron Beam Annealing of GaAs and InP

Published online by Cambridge University Press:  22 February 2011

A. Laugier ,
D. Barbier  and
G. Chemisky
A. Laugier
Affiliation:
Laboratoire de Physique de la Matière (LA 358) Institut National des Sciences Appliquées de Lyon 20, Avenue Albert Einstein 69621 Villeurbanne Cedex (France)
D. Barbier
Affiliation:
Laboratoire de Physique de la Matière (LA 358) Institut National des Sciences Appliquées de Lyon 20, Avenue Albert Einstein 69621 Villeurbanne Cedex (France)
G. Chemisky
Affiliation:
Laboratoire de Physique de la Matière (LA 358) Institut National des Sciences Appliquées de Lyon 20, Avenue Albert Einstein 69621 Villeurbanne Cedex (France)
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Abstract

PEBA induced thermal effects in GaAs and InP have been simulated. Monte-Carlo calculation has been used to determine universal electron energy loss functions in the 5–50 keV energy range for these materials. Similar electron depth-dose profiles of a polykinetic electron beam pulse is deduced in both GaAs and lnP. A simple adiabatic approach is sufficient to establish relationship between melting depths and fluences. Thermal effects homogeneity and surface degradation are discussed for both crystalline and amorphous materials using variable electron energy deposition profiles. Correlation is made between experimentally measured degradation thresholds and calculated fluence windows within which melting effects are expected.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 699
Copyright
Copyright © Materials Research Society 1984

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References

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