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TFT Performance - Material Quality Correlation for a-Si:H Deposited at high Rates

Published online by Cambridge University Press:  15 February 2011

S. Sherman ,
P-Y. Lu ,
R. A. Gottscho  and
S. Wagner
S. Sherman
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
P-Y. Lu
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R. A. Gottscho
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

We evaluated the characteristics of a-Si:H/a-SiNx:H thin film transistors (TFTs), and of separately deposited a-Si:H films, as functions of the a-Si:H deposition power in a high-rate, large-area, 40 MHz PE-CVD system. TFT performance and a-Si:H film properties improve with decreasing power density and deposition rate. However, low defect density a-Si:H material was deposited at rates as high as 1500 Å/min. TFTs with gate nitride deposited at 1000 A/min show excellent I-V characteristics when the a-Si:H deposition power is low enough. The TFT electron mobility in the linear regime correlates well with the Urbach energy of the a-Si:H films, suggesting that the quality of the a-Si: H controls the performance of our TFTs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 749
Copyright
Copyright © Materials Research Society 1995

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References

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