Hostname: page-component-848d4c4894-v5vhk Total loading time: 0 Render date: 2024-07-04T07:31:47.932Z Has data issue: false hasContentIssue false
  • English
  • Français

Texture Evolution in Cu Films and Lines

Published online by Cambridge University Press:  01 February 2011

Chia-Jeng Chung ,
David Field ,
No-Jin Park  and
Christy Woo
Chia-Jeng Chung
Affiliation:
cchung1@wsu.edu, Washington State University, Materials Science and Engineering, Pullman WA 99163, United States
David Field
Affiliation:
dfield@wsu.edu, WSU, MSE, Spokane Street, Pullman, WA, 99163, United States
No-Jin Park
Affiliation:
njpark@kumoh.ac.kr, Kumoh Institute of Technology, Gumi City, N/A, Korea, Democratic People's Republic of
Christy Woo
Affiliation:
christy.woo@spansion.com, Advanced Micro Devices, Sunnyvale, 94086, United Kingdom
Get access

Abstract

Grain growth in polycrystalline films is controlled by the energetics of the surface, interface and grain boundaries as well as strain energy. The unique character of damascene lines fabricated from electroplated Cu films introduces the additional considerations of bath chemistry and geometric constraints. The moderate stacking fault energy of Cu allows for the development of a substantial twin fraction for certain growth conditions. This paper discusses in-situ observation of grain growth in Cu films and lines under various processing conditions. It is shown that for thicker films and for structures constrained within damascene trenches the energetics of twin boundary formation play a large role in texture development of these structures.

Keywords

Cumicrostructurethin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 990: Symposium B – Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics , 2007 , 0990-B08-23
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Riege, Stefan P., Thompson, Carl V., Scripta Materialia, Vol. 41, No. 4, 403–408, 1999 Google Scholar
2 Abe, K., Harada, Y., and Onoda, H., Proceedings of the 36th Annual International Reliability Physics Symposium, IEEE, 1998, p. 342 Google Scholar
3 Ryu, C-S, PhD Thesis, Stanford University, June, 1998 Google Scholar
4 Wrschka, P., Hernandez, J., Oehrlein, G. S., King, J., Journal of The Electrochemical Society, 147 (2) 706–712 (2000)Google Scholar
5 Park, N.-J., Field, D. P., Scripta Materialia 54 (2006) 999–1003 Google Scholar
6Sundquist BE., Acta Metall, 1964;12:67Google Scholar
7Mclean M., Acta Metall, 1971;19:387Google Scholar
8 Murr, L. E., Interfacial Phenomena in Metals and Alloys, London: Addison-Wesley, 1975 Google Scholar
9 Ohring, Milton, Materials Science of Thin Films – Deposition & Structure, second edition, Wiley and Sons, New York, 1999.Google Scholar
10 Humphreys, F. J., Hatherly, M., Recrystallization and Related Annealing PhenomenaGoogle Scholar